The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 17, 2012

Filed:

Dec. 03, 2009
Applicant:

Koujirou Matsui, Kanagawa, JP;

Inventor:

Koujirou Matsui, Kanagawa, JP;

Assignee:

Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes: a first capacitor including an upper electrode, a lower electrode, an intermediate electrode arranged between the upper electrode and the lower electrode, and a shield line arranged in the same layer as the intermediate electrode; and a second capacitor, including an upper electrode, a lower electrode, and an intermediate electrode arranged between the upper electrode and the lower electrode, and arranged adjoining to the first capacitor. In the first capacitor and the second capacitor, the upper electrode, the lower electrode and the shield line are electrically connected to a ground electrode. The shield line lies between the first capacitor and the second capacitor. Accordingly, a MIM capacitor with excellent layout efficiency is provided while noise effects are reduced.


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