The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2012
Filed:
Jul. 29, 2009
Hisao Kawasaki, Kanagawa-ken, JP;
Hisao Kawasaki, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device including: a SiC substrate; an AlGaN layer formed on the SiC substrate; a source electrode and a drain electrode formed on the AlGaN layer so as to be spaced from each other; an insulation film formed between the source electrode and the drain electrode and having a band-like opening in parallel to the source electrode and the drain electrode; a gate electrode formed at the opening in the insulation film; and a drain-side field plate electrode formed integrally with the gate electrode on the drain electrode side of the gate electrode and having a drain electrode side end portion spaced from the insulation film, thus restraining degradation in performance.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile