The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 17, 2012

Filed:

Apr. 01, 2009
Applicants:

Kwang-soo Seol, Yongin-si, KR;

Yoon-dong Park, Yongin-si, KR;

Suk-pil Kim, Yongin-si, KR;

Inventors:

Kwang-soo Seol, Yongin-si, KR;

Yoon-dong Park, Yongin-si, KR;

Suk-pil Kim, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

A multi-layered non-volatile memory device and a method of manufacturing the same. The non-volatile memory device may include a plurality of first semiconductor layers having a stack structure. A plurality of control gate electrodes may extend across the first semiconductor layers. A first body contact layer may extend across the first semiconductor layers. A plurality of charge storage layers may be interposed between the control gate electrodes and the first semiconductor layers.


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