The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2012
Filed:
Aug. 23, 2007
Ji-hao Liang, Kawasaki, JP;
Masahiko Tsuchiya, Kamakura, JP;
Takako Chinone, Tokyo, JP;
Masataka Kajikawa, Kawasaki, JP;
Ji-Hao Liang, Kawasaki, JP;
Masahiko Tsuchiya, Kamakura, JP;
Takako Chinone, Tokyo, JP;
Masataka Kajikawa, Kawasaki, JP;
Stanley Electric Co., Ltd., Tokyo, JP;
Abstract
A nitride semiconductor light emitting device is formed by: forming a resist pattern on a first nitride semiconductor layer formed on a substrate, the resist pattern having a region whose inclination angle relative to a substrate surface changes smoothly as viewed in a cross section perpendicular to the substrate surface; etching the substrate by using the resist pattern as a mask to transfer the resist pattern to the first nitride semiconductor layer; and forming an light emitting layer on the patterned first nitride semiconductor layer. The nitride semiconductor light emitting device can emit near-white light or have a wavelength range generally equivalent to or near visible light range.