The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2012
Filed:
Jul. 01, 2009
Ji-su Ahn, Yongin, KR;
Eui-hoon Hwang, Yongin, KR;
Cheol-ho Yu, Yongin, KR;
Kwang-nam Kim, Yongin, KR;
Sung-chul Kim, Yongin, KR;
Ji-Su Ahn, Yongin, KR;
Eui-Hoon Hwang, Yongin, KR;
Cheol-Ho Yu, Yongin, KR;
Kwang-Nam Kim, Yongin, KR;
Sung-Chul Kim, Yongin, KR;
Samsung Mobile Display Co., Ltd., Yongin, Gyunggi-do, KR;
Abstract
A thin film transistor (TFT), including a crystalline semiconductor pattern on a substrate, a gate insulating layer on the crystalline semiconductor pattern, the gate insulating layer having two first source/drain contact holes and a semiconductor pattern access hole therein, a gate electrode on the gate insulating layer, the gate electrode being between the two first source/drain contact holes, an interlayer insulating layer covering the gate electrode, the interlayer insulating layer having two second source/drain contact holes therein, and source and drain electrodes on the interlayer insulating layer, each of the source and drain electrodes being insulated from the gate electrode, and having a portion connected to the crystalline semiconductor pattern through the first and second source/drain contact holes.