The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2012
Filed:
Feb. 26, 2010
Kyoung-seok Son, Seoul, KR;
Jang-yeon Kwon, Seongnam-si, KR;
Hyoung-sub Kim, Seoul, KR;
Hoo-jeong Lee, Suwon-si, KR;
Mi-ran Moon, Suwon-si, KR;
Kyung Park, Suwon-si, KR;
Kyoung-seok Son, Seoul, KR;
Jang-yeon Kwon, Seongnam-si, KR;
Hyoung-sub Kim, Seoul, KR;
Hoo-jeong Lee, Suwon-si, KR;
Mi-ran Moon, Suwon-si, KR;
Kyung Park, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Example embodiments relate to thin-film transistors (TFT) and methods for fabricating the same. A thin-film transistor according to example embodiments may include a gate, a gate insulation layer, a channel layer including a first oxide semiconductor layer and a second oxide semiconductor layer, and a source and drain on opposite sides of the channel layer. The first oxide semiconductor layer may have relatively large crystal grains compared to the second oxide semiconductor layer.