The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8158516 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 17, 2012

Filed:

Jan. 31, 2011
Applicant:

Takuji Kuniya, Mie-ken, JP;

Inventor:

Takuji Kuniya, Mie-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to one embodiment, a method is described for manufacturing a semiconductor device. The method can form a conductive layer including tungsten on a foundation layer. The method can form a trench by selectively etching the conductive layer. The trench is shallower than a depth from a surface of the conductive layer to the foundation layer. The method can form a protective film on a side surface and a bottom surface of the conductive layer in the trench using a gas containing bromine. The protective film includes a compound of the tungsten and the bromine. The method can remove the protective film on the bottom surface of the conductive layer. The method can etch a portion of the conductive layer below the trench with the protective film on the side surface of the conductive layer.


Find Patent Forward Citations

Kuniya, Takuji. (2012). Method for manufacturing semiconductor device (U.S. Patent No. 8158516). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8158516

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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