The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2012
Filed:
Jun. 18, 2008
Hee-soo Kang, Yongin-si, KR;
Choong-ho Lee, Yongin-si, KR;
Suk-kang Sung, Seongnam-si, KR;
Se-jun Park, Suwon-si, KR;
Hee-Soo Kang, Yongin-si, KR;
Choong-Ho Lee, Yongin-si, KR;
Suk-Kang Sung, Seongnam-si, KR;
Se-Jun Park, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method of forming a semiconductor device pattern, a method of forming a charge storage pattern, a non-volatile memory device including a charge storage pattern and a method of manufacturing the same are provided. The method of forming the charge storage pattern including forming a trench on a substrate, and a device isolation pattern in the trench. The device isolation pattern protrudes from a surface of the substrate such that an opening exposing the substrate is formed. A tunnel oxide layer is formed on the substrate in the opening. A preliminary charge storage pattern is formed on the tunnel oxide layer and the device isolation pattern by selective deposition of conductive materials. The preliminary charge storage pattern may be removed from the device isolation pattern. The preliminary charge storage pattern remains only on the tunnel oxide layer to form the charge storage pattern on the substrate.