The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2012
Filed:
Aug. 23, 2010
Katsura Miyashita, Fishkill, NY (US);
Katsura Miyashita, Fishkill, NY (US);
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Abstract
A SRAM bit cell and an associated method of producing the SRAM bit cell with improved performance and stability is provided. In one configuration, channel mobility of the transistors within the SRAM bit cell may be adjusted to provide improved stability. In order to adjust the channel mobility, a stress memorization technique may be used, a wide spacer may be used, germanium may be implanted on tensile stress silicon nitride, a compressive liner may be used or silicon germanium may be embedded in one or more of the devices in the cell. In another configuration, the gate capacitance of each device within the SRAM bit cell may be adjusted to achieve high SRAM yield. For instance, a thick gate oxide may be used, phosphorous pre-doping may be used or fluorine pre-doping may be used in one or more of the devices within the cell.