The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2012
Filed:
Apr. 19, 2006
Giuseppe Curro′, Messina, IT;
Giuseppe Curro′, Messina, IT;
STMicroelectronics S.r.l., Agrate Brianza, IT;
Abstract
A process for manufacturing a MOS device includes forming a semiconductor layer having a first type of conductivity; forming an insulated gate structure having an electrode region (), above the semiconductor layer (); forming body regions having a second type of conductivity, within the semiconductor layer, laterally and partially underneath the insulated gate structure; forming source regions having the first type of conductivity, within the body regions; and forming a first enrichment region, in a surface portion of the semiconductor layer underneath the insulated gate structure. The first enrichment region has the first type of conductivity and is set at a distance from the body regions. In order to form the first enrichment region, a first enrichment window is defined within the insulated gate structure, and first dopant species of the first type of conductivity are introduced through the first enrichment window and in a way self-aligned thereto.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile