The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2012
Filed:
Jul. 06, 2009
Manabu Iguchi, Kanagawa, JP;
Mami Miyasaka, Kanagawa, JP;
Manabu Iguchi, Kanagawa, JP;
Mami Miyasaka, Kanagawa, JP;
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Abstract
A method of manufacturing a semiconductor device includes: forming a groove portion in a dicing region of an insulating layer and forming a via hole in an internal circuit formation region; providing a first resist film on the insulating layer; providing a second resist film to cover the first resist film; forming an interconnect opening in a region covering an internal circuit formation region of the second resist film and forming a position aligning opening in a region covering the dicing region of the second resist film; and detecting a positional relationship between the groove portion and the position aligning opening so as to detect whether the interconnect opening of the second resist film exists at a predetermined position with respect to the via hole of the insulating layer. In selective removing of the second resist film, the position aligning opening is formed such that a region of the position aligning opening covers the groove portion of the insulating layer.