The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2012
Filed:
Nov. 05, 2010
Applicants:
Yong-hwan Ryu, Yongin-si, KR;
Jae-seung Hwang, Suwon-si, KR;
Sung-un Kwon, Jeonju-si, KR;
Kyoung-ha Eom, Incheon, KR;
Inventors:
Yong-Hwan Ryu, Yongin-si, KR;
Jae-Seung Hwang, Suwon-si, KR;
Sung-Un Kwon, Jeonju-si, KR;
Kyoung-Ha Eom, Incheon, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods of forming pattern structures and methods of manufacturing memory devices using the same are provided, the methods of forming pattern structures include forming an etching object layer on a substrate and performing a plasma reactive etching process on the etching object layer using an etching gas including at least ammonia (NH) gas. The etching object layer includes a magnetic material or a phase change material.