The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 17, 2012

Filed:

Aug. 25, 2009
Applicants:

Dunwei Wang, Newton Highlands, MA (US);

SA Zhou, Chestnut Hill, MA (US);

Inventors:

Dunwei Wang, Newton Highlands, MA (US);

Sa Zhou, Chestnut Hill, MA (US);

Assignee:

The Trustees of Boston College, Chestnut Hill, MA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01B 5/00 (2006.01); H05K 3/00 (2006.01); B05D 5/12 (2006.01);
U.S. Cl.
CPC ...
Abstract

The embodiments disclosed herein relate to the fabrication of complex two-dimensional conductive silicide nanostructures, and methods of fabricating the nanostructures. In an embodiment, a conductive silicide includes a plurality of connected and spaced-apart nanobeams linked together at an about 90-degree angle, the plurality of nanobeams forming a two-dimensional nanostructure having a mesh-like appearance. In an embodiment, a method of fabricating a two-dimensional conductive silicide includes performing chemical vapor deposition, wherein one or more gas or liquid precursor materials carried by a carrier gas stream react to form a nanostructure having a mesh-like appearance and including a plurality of connected and spaced-apart nanobeams linked together at an about 90-degree angle.


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