The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 17, 2012

Filed:

Dec. 24, 2008
Applicants:

Chih-wei Chen, Taipei County, TW;

Chin-jyi Wu, Hsinchu County, TW;

Wen-tzong Hsieh, Taichung County, TW;

Wen-tung Hsu, Hsinchu County, TW;

Chun-hung Lin, Hsinchu, TW;

Inventors:

Chih-Wei Chen, Taipei County, TW;

Chin-Jyi Wu, Hsinchu County, TW;

Wen-Tzong Hsieh, Taichung County, TW;

Wen-Tung Hsu, Hsinchu County, TW;

Chun-Hung Lin, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05H 1/00 (2006.01); C23C 4/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing an anti-reflection structure is provided. The method includes the following steps: First, a to-be-treated object is provided in a reactive area. Next, a plasma source is provided in the reactive area. Then, the plasma source is ionized to form plasma in atmospheric pressure. Next, the surface of the to-be-treated object is treated by plasma so as to form a plurality of micro-protuberances on the surface of the to-be-treated object.


Find Patent Forward Citations

Loading…