The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2012
Filed:
Oct. 14, 2008
Wen-jun Zhang, Hong Kong, CN;
Igor Bello, Hong Kong, CN;
Shuit-tong Lee, Hong Kong, CN;
You-sheng Zou, Hong Kong, CN;
Yat Ming Chong, Hong Kong, CN;
Qing YE, Hong Kong, CN;
Wen-Jun Zhang, Hong Kong, CN;
Igor Bello, Hong Kong, CN;
Shuit-Tong Lee, Hong Kong, CN;
You-Sheng Zou, Hong Kong, CN;
Yat Ming Chong, Hong Kong, CN;
Qing Ye, Hong Kong, CN;
City University of Hong Kong, Kowloon, HK;
Abstract
A conical structure of cubic Boron Nitride (cBN) is formed on a diamond layered substrate. A method of forming the cBN structure includes steps of (a) forming diamond nuclei on a substrate, (b) growing a layer of diamond film on the substrate, (c) depositing a cBN film on said diamond layer, (d) pre-depositing nanoscale etching masks on the cBN film, and (e) etching the deposited cBN film. In particular, though not exclusively, the cubic Boron Nitride structure has great potential applications in probe analytical and testing techniques including scanning probe microscopy (SPM) and nanoindentation, nanomechanics and nanomachining in progressing microelectromechanical system (MEMS) and nanoelectyromechanical system (NEMS) devices, field electron emission, vacuum microelectronic devices, sensors and different electrode systems including those used in electrochemistry.