The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2012
Filed:
Aug. 26, 2009
Kyung-tae DO, Gyeongsangnam-do, KR;
Jung-yun Choi, Gyeonggi-do, KR;
Bong-hyun Lee, Gyeonggi-do, KR;
Young-hwan Kim, Gyeongsangbuk-do, KR;
Hyo-sig Won, Gyeonggi-do, KR;
Wook Kim, Gyeongsangbuk-do, KR;
Kyung-Tae Do, Gyeongsangnam-do, KR;
Jung-Yun Choi, Gyeonggi-do, KR;
Bong-Hyun Lee, Gyeonggi-do, KR;
Young-Hwan Kim, Gyeongsangbuk-do, KR;
Hyo-Sig Won, Gyeonggi-do, KR;
Wook Kim, Gyeongsangbuk-do, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
In a method of estimating a leakage current in a semiconductor device, a chip including a plurality of cells is divided into segments by a grid model. Spatial correlation is determined as spatial correlation between process parameters concerned with the leakage currents in each of the cells. A virtual cell leakage characteristic function of a cell is generated by arithmetically operating actual leakage characteristic functions. A segment leakage characteristic function of a segment is generated by arithmetically operating the virtual cell leakage characteristic functions of all cells in the segment. Then, a full chip leakage characteristic function of the chip is generated by statistically operating the segment leakage characteristic functions of all segments in the chip. Accordingly, computational loads of Wilkinson's method for generating the full chip leakage characteristic function can remarkably be reduced.