The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2012
Filed:
Dec. 28, 2009
Sang Kyu Lee, Chungcheongbuk-do, KR;
Seung Jae Chung, Gyeonggi-do, KR;
Sang Kyu Lee, Chungcheongbuk-do, KR;
Seung Jae Chung, Gyeonggi-do, KR;
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Abstract
A nonvolatile memory device includes a read margin critical value calculation unit configured to calculate a critical value of a read margin between a read voltage and a threshold voltage of a specific cell, an interference value calculation unit configured to calculate an interference value affecting the threshold voltage of the specific cell, a comparison unit configured to compare the critical value and the interference value and to output a result of the comparison, and a data selection unit configured to output either first data, read from the specific cell using a first read voltage, or second data, read from the specific cell using a second read voltage, based on the result outputted from the comparison unit.