The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 10, 2012

Filed:

Jan. 28, 2011
Applicants:

Yiran Chen, Eden Prairie, MN (US);

Hai LI, Eden Prairie, MN (US);

Harry Hongyue Liu, Maple Grove, MN (US);

Dimitar V. Dimitrov, Edina, MN (US);

Alan Xuguang Wang, Eden Prairie, MN (US);

Xiaobin Wang, Chanhassen, MN (US);

Inventors:

Yiran Chen, Eden Prairie, MN (US);

Hai Li, Eden Prairie, MN (US);

Harry Hongyue Liu, Maple Grove, MN (US);

Dimitar V. Dimitrov, Edina, MN (US);

Alan Xuguang Wang, Eden Prairie, MN (US);

Xiaobin Wang, Chanhassen, MN (US);

Assignee:

Seagate Technology LLC, Scotts Valley, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/02 (2006.01); G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method and apparatus for using thermal preconditioning to write data to a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In some embodiments, a logical state is written to an unconditioned non-volatile first memory cell associated with a first block address. Thermal preconditioning is concurrently applied to a non-volatile second memory cell associated with a second block address selected in response to the first block address.


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