The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2012
Filed:
Jul. 12, 2010
Shinya Sasagawa, Kanagawa, JP;
Shinya Hasegawa, Kanagawa, JP;
Hidekazu Takahashi, Tochigi, JP;
Tatsuya Arao, Kanagawa, JP;
Shinya Sasagawa, Kanagawa, JP;
Shinya Hasegawa, Kanagawa, JP;
Hidekazu Takahashi, Tochigi, JP;
Tatsuya Arao, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
An object is to provide a photoelectric conversion element having a side surface with different taper angles by conducting etching of a photoelectric conversion layer step-by-step. A pin photodiode has a high response speed compared with a pn photodiode but has a disadvantage of large dark current. One cause of the dark current is considered to be conduction through an etching residue which is generated in etching and deposited on a side surface of the photoelectric conversion layer. Leakage current of the photoelectric conversion element is reduced by forming a structure in which a side surface has two different tapered shapes, which conventionally has a uniform surface, so that the photoelectric conversion layer has a side surface of a p-layer and a side surface of an n-layer, which are not in the same plane.