The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2012
Filed:
Apr. 25, 2008
Catherine Dubourdieu, Grenoble, FR;
Erwan Yann Rauwel, Oslo, NO;
Vincent Cosnier, Grenoble, FR;
Sandrine Lhostis, Theys, FR;
Daniel-camille Bensahel, Grenoble, FR;
Catherine Dubourdieu, Grenoble, FR;
Erwan Yann Rauwel, Oslo, NO;
Vincent Cosnier, Grenoble, FR;
Sandrine Lhostis, Theys, FR;
Daniel-Camille Bensahel, Grenoble, FR;
Centre National de la Recherche Scientifique-CNRS, Paris Cedex, FR;
Institut National Polytechnique de Grenoble, Grenoble Cedex, FR;
Abstract
An integrated electronic circuit has a thin layer portion based on hafnium oxide. This portion additionally contains magnesium atoms, so that the portion is in the form of a hafnium-and-magnesium mixed oxide. Such a portion has a high dielectric constant and a very low leakage current. It is particularly suitable for forming a part of a gate insulation layer of a MOS transistor or a part of a MIM capacitor dielectric.