The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2012
Filed:
Jan. 27, 2010
Applicants:
Yoshihiko Moriyama, Tokyo, JP;
Yoshiki Kamata, Tokyo, JP;
Tsutomu Tezuka, Kanagawa, JP;
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes an NMISFET region. The NMISFET region includes a Ge nano wire having a triangular cross section along a direction perpendicular to a channel current direction, wherein two of surfaces that define the triangular cross section of the Ge nano wire are (111) planes, and the other surface that define the triangular cross section of the Ge nano wire is a (100) plane; and an Si layer or an SiGelayer (0<x<0.5) on the (100) plane of the Ge nano wire.