The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2012
Filed:
Nov. 28, 2007
Applicants:
Keiichi Matsushita, Kawasaki, JP;
Kazutaka Takagi, Kawasaki, JP;
Naotaka Tomita, Kawasaki, JP;
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/113 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device, which can prevent an element breakdown by alleviating of electric field concentrations, and can also prevent reduction of gain, includes: a source electrode formed on a semiconductor layer; a drain electrode formed on the semiconductor layer; a gate electrode formed between the source electrode and the drain electrode; an insulating film formed on the semiconductor layer and the gate electrode; a field plate electrode formed on the insulating film; and a resistor for connecting the field plate electrode and the source electrode.