The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2012
Filed:
Feb. 17, 2010
Yih-jau Chang, Zhudong Township, Hsinchu County, TW;
Shang-hui Tu, Tainan, TW;
Gene Sheu, Wufeng Township. Taichung County, TW;
Yih-Jau Chang, Zhudong Township, Hsinchu County, TW;
Shang-Hui Tu, Tainan, TW;
Gene Sheu, Wufeng Township. Taichung County, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A semiconductor structure is provided. A second conductivity type well region is disposed on a first conductivity type substrate. A gate structure comprising a first sidewall and second sidewall is provided. The first sidewall is disposed on the second conductivity type well region. A second conductivity type diffused source is disposed on the first conductivity type substrate outside of the second sidewall. A second conductivity type diffused drain is disposed on the second conductivity type well region outside of the first sidewall. First conductivity type buried rings are arranged in a horizontal direction, separated from each other, and formed in the second conductivity type well region. Doped profiles of the first conductivity type buried rings gradually become smaller in a direction from the second conductivity type diffused source to the second conductivity type diffused drain.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile