The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2012
Filed:
Jul. 10, 2009
Chuan-sheng Wei, Taichung County, TW;
Guang-ren Shen, Yunlin County, TW;
Chang-yu Huang, Taipei, TW;
Pei-ming Chen, Taipei County, TW;
Sheng-chao Liu, Hsinchu County, TW;
Chun-hsiun Chen, Hsinchu, TW;
Wei-ming Huang, Taipei, TW;
Chuan-Sheng Wei, Taichung County, TW;
Guang-Ren Shen, Yunlin County, TW;
Chang-Yu Huang, Taipei, TW;
Pei-Ming Chen, Taipei County, TW;
Sheng-Chao Liu, Hsinchu County, TW;
Chun-Hsiun Chen, Hsinchu, TW;
Wei-Ming Huang, Taipei, TW;
Au Optronics Corporation, Hsinchu, TW;
Abstract
A bottom gate thin film transistor and an active array substrate are provided. The bottom gate thin film transistor includes a gate, a gate insulation layer, a semiconductor layer, a plurality of sources and a plurality of drains. The gate insulation layer is disposed on the gate. The semiconductor layer is disposed on the gate insulation layer and located above the gate. An area ratio of the semiconductor layer and the gate is about 0.001 to 0.9. The sources are electrically connected with each other, and the drains are electrically connected with each other.