The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8154035 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 10, 2012

Filed:

Dec. 18, 2009
Applicant:

Mayuko Fudeta, Osaka, JP;

Inventor:

Mayuko Fudeta, Osaka, JP;

Assignee:

Sharp Kabushiki Kaisha, Osaka-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/205 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a nitride semiconductor light emitting element, a light transmitting substrate has an upper surface on which a nitride semiconductor layer including at least a light emitting layer is formed. On the upper surface of the light transmitting substrate, recess regions and rise regions are formed. One of each of the recess regions and each of the rise regions is formed by a polygon having at least one apex having an interior angle of 180° or greater when viewed in a planar view. The other of each of the recess regions and each of the rise regions is formed not to be connected to one another in a straight line when viewed in a planar view. A nitride semiconductor light emitting element having such a configuration has excellent light extraction efficiency and can be manufactured at a moderate cost.


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