The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2012
Filed:
May. 12, 2009
An-thung Cho, Hualien County, TW;
Chia-tien Peng, Hsinchu County, TW;
Yu-cheng Chen, Hsinchu, TW;
Hong-zhang Lin, Taichung, TW;
Yi-chien Wen, Taipei, TW;
Wei-min Sun, Taipei, TW;
Chi-mao Hung, Chiayi, TW;
Chun-hsiun Chen, Hsinchu, TW;
An-Thung Cho, Hualien County, TW;
Chia-Tien Peng, Hsinchu County, TW;
Yu-Cheng Chen, Hsinchu, TW;
Hong-Zhang Lin, Taichung, TW;
Yi-Chien Wen, Taipei, TW;
Wei-Min Sun, Taipei, TW;
Chi-Mao Hung, Chiayi, TW;
Chun-Hsiun Chen, Hsinchu, TW;
Au Optronics Corporation, Hsinchu, TW;
Abstract
A photo-voltaic cell device includes a first electrode, an N-type doped silicon-rich dielectric layer, a P-type doped silicon-rich dielectric layer, and a second electrode. The N-type doped silicon-rich dielectric layer is disposed on the first electrode, and the N-type doped silicon-rich dielectric layer is doped with an N-type dopant. The P-type doped silicon-rich dielectric layer is disposed on the N-type doped silicon-rich dielectric layer, and the P-type doped silicon-rich dielectric layer is doped with a P-type dopant. The second electrode is disposed on the P-type doped silicon-rich dielectric layer. A display panel including the photo-voltaic cell device is also provided.