The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2012
Filed:
Feb. 09, 2010
Jia-min Shieh, Hsinchu, TW;
Wen-chein Yu, Hsinchu, TW;
Chao-kei Wang, Hsinchu, TW;
Bau-tong Dai, Hsinchu, TW;
Ci-ling Pan, Hsinchu, TW;
Hao-chung Kuo, Hsinchu, TW;
Jung-y. Huang, Hsinchu, TW;
Jia-Min Shieh, Hsinchu, TW;
Wen-Chein Yu, Hsinchu, TW;
Chao-Kei Wang, Hsinchu, TW;
Bau-Tong Dai, Hsinchu, TW;
Ci-Ling Pan, Hsinchu, TW;
Hao-Chung Kuo, Hsinchu, TW;
Jung-Y. Huang, Hsinchu, TW;
National Applied Research Laboratories, Hsinchu, TW;
Abstract
A mesoporous silica having adjustable pores is obtained to form a template and thus a three-terminal metal-oxide-semiconductor field-effect transistor (MOSFET) photodetector is obtained. A gate dielectric of a nano-structural silicon-base membrane is used as infrared light absorber in it. Thus, a semiconductor photodetector made of pure silicon having a quantum-dot structure is obtained with excellent near-infrared optoelectronic response.