The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 10, 2012

Filed:

Feb. 16, 2009
Applicants:

Alexandru S. Biris, Little Rock, AR (US);

Enkeleda Dervishi, Little Rock, AR (US);

Yang Xu, Little Rock, AR (US);

Zhongrui LI, Little Rock, AR (US);

Inventors:

Alexandru S. Biris, Little Rock, AR (US);

Enkeleda Dervishi, Little Rock, AR (US);

Yang Xu, Little Rock, AR (US);

Zhongrui Li, Little Rock, AR (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H05B 6/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

An apparatus and method for synthesizing nanostructures in a reactor having a reaction zone and a conductive susceptor positioned in the reaction zone. In one embodiment, the method has the steps of placing a semiconductor plate having a film of a catalyst in the reaction zone such that the semiconductor plate is supported by the conductive susceptor; transporting a gas mixture having a feedstock gas having hydrocarbon and a carrier gas into the reaction zone of the chamber; inductively heating the reaction zone; and regulating the heating so that the temperature of the conductive susceptor increases from a first temperature to a second temperature when the gas mixture is introduced into the cavity of the chamber to allow nanostructures to be grown from the interaction of the gas mixture with the film of a catalyst of the semiconductor plate.


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