The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2012
Filed:
May. 22, 2008
Stuart Ross Wenham, New South Wales, AU;
Ly Mai, New South Wales, AU;
Zhengrong Shi, Wuxi, CN;
Jingjia Ji, Shanghai, CN;
Stuart Ross Wenham, New South Wales, AU;
Ly Mai, New South Wales, AU;
Zhengrong Shi, Wuxi, CN;
JingJia Ji, Shanghai, CN;
NewSouth Innovations Pty Ltd., New South Wales, AU;
Suntech Power Co. Ltd., Wuxi, CN;
Abstract
A solar cell comprises adjacent regions of oppositely doped semiconductor material forming a pn junction substantially parallel to front and rear surfaces of the solar cell. A surface of the semiconductor material has a plurality of depressions, with semiconductor material regions forming internal wall surface regions of the depressions being doped to the polarity of one of the semiconductor regions, with which they are in electrical communication. The wall surface regions of the depressions are isolated from the other oppositely doped semiconductor region and form contact points for a contact structure contacting the surface in which the depressions are formed. A dielectric layer is formed over the surface, the dielectric layer being thinner or non-existent in at least a portion of each depression, such that a screen printed metal contact structure formed over the dielectric layer and extending into the depressions makes contact with the semiconductor material in the depressions after sintering.