Organometallic compounds, processes for the preparation thereof and methods of use thereof

Abstract

This invention relates to organometallic compounds represented by the formula (L)M(L)wherein M is a Group 5 metal or a Group 6 metal, Lis a substituted or unsubstituted anionic 6 electron donor ligand, Lis the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand, (ii) a substituted or unsubstituted cationic 2 electron donor ligand, or (iii) a substituted or unsubstituted neutral 2 electron donor ligand; y is an integer of 1, and z is the valence of M; and wherein the sum of the oxidation number of M and the electric charges of Land Lis equal to 0; a process for producing the organometallic compounds; and a method for depositing a metal and/or metal carbide/nitride layer, e.g., a tungsten, tungsten nitride, tungsten carbide, or tungsten carbonitride layer, on a substrate by the thermal or plasma enhanced dissociation of the organometallic precursor compounds, e.g., by CVD or ALD techniques. The metal and/or metal carbide layer is useful as a liner or barrier layer for conducting metals and high dielectric constant materials in integrated circuit manufacturing.