The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2012
Filed:
Oct. 30, 2008
Kuang-chao Yeh, Ping Chen, TW;
Wen-bin Hsu, Miaoli Hsien, TW;
Kuang-Chao Yeh, Ping Chen, TW;
Wen-Bin Hsu, Miaoli Hsien, TW;
Au Optronics Corp., Hsinchu, TW;
Abstract
A thin film transistor (TFT) formed on a substrate includes a polycrystalline film, a gate insulator, a hydrogen-supplying film and a gate electrode. The polycrystalline film is formed on the substrate. Two sides of the polycrystalline film serve as the source and the drain of the semiconductor device, and the central region of the polycrystalline layer serves as the channel. The gate insulator is formed on the polycrystalline film, then the polycrystalline film is ions implanted, and the hydrogen-supplying film is formed on the gate insulator. The gate electrode is formed on the hydrogen-supplying film above the channel. The hydrogen-supplying film supplies hydrogen to the polycrystalline film, especially to the channel, so as to transform the unsaturated bonds into hydrogen bonds in the channel for avoiding the unsaturated bonds to degrade the charge carrier efficiency of the channel.