The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2012
Filed:
Aug. 11, 2011
Shih-peng Chen, Taoyuan Hsien, TW;
Chia-hua Chan, Taoyuan Hsien, TW;
Horng-jou Wang, Taoyuan Hsien, TW;
Ching-liang Lin, Taoyuan Hsien, TW;
Chii-chang Chen, Taoyuan Hsien, TW;
Cheng-yi Liu, Taoyuan Hsien, TW;
Huang-kun Chen, Taoyuan Hsien, TW;
Shih-Peng Chen, Taoyuan Hsien, TW;
Chia-Hua Chan, Taoyuan Hsien, TW;
Horng-Jou Wang, Taoyuan Hsien, TW;
Ching-Liang Lin, Taoyuan Hsien, TW;
Chii-Chang Chen, Taoyuan Hsien, TW;
Cheng-Yi Liu, Taoyuan Hsien, TW;
Huang-Kun Chen, Taoyuan Hsien, TW;
Delta Electronics, Inc., Kuei San, Taoyuan Hsien, TW;
National Central University, Jhongli, Taoyuan County, TW;
Abstract
A light-emitting diode (LED) apparatus includes a thermoconductive substrate, a thermoconductive adhesive layer, an epitaxial layer, a current spreading layer and a micro- or nano-roughing structure. The thermoconductive adhesive layer is disposed on the thermoconductive substrate. The epitaxial layer is disposed opposite to the thermoconductive adhesive layer and has a first semiconductor layer, an active layer and a second semiconductor layer. The current spreading layer is disposed between the second semiconductor layer of the epitaxial layer and the thermoconductive adhesive layer. The micro- or nano-roughing structure is disposed on the first semiconductor layer of the epitaxial layer. In addition, a manufacturing method of the LED apparatus is also disclosed.