The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2012
Filed:
Mar. 15, 2011
Chih-chung Yang, Taipei, TW;
Cheng-hung Lin, Taipei, TW;
Chih-yen Chen, Taipei, TW;
Che-hao Liao, Taipei, TW;
Chieh Hsieh, Taipei, TW;
Chih-Chung Yang, Taipei, TW;
Cheng-Hung Lin, Taipei, TW;
Chih-Yen Chen, Taipei, TW;
Che-Hao Liao, Taipei, TW;
Chieh Hsieh, Taipei, TW;
National Taiwan University, Taipei, TW;
Abstract
The invention provides a method for forming a light emitting device. A first substrate is provided. A plurality of patterned masks is formed on the first substrate, or on a semiconductor epitaxial layer grown on the first substrate, or the first substrate is etched to form a plurality of trenches, followed by performing an epitaxial lateral overgrowth process to grow an epitaxy layer over the first substrate. A light emitting structure is formed on the epitaxy layer. A first electrode layer is formed on the light emitting structure. The light emitting structure is wafer bonded to a second substrate. A photoelectrochemical etching process is performed to lift off the first substrate from the epitaxy layer.