The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2012
Filed:
Dec. 29, 2008
Boon Jin Ang, Bagan Ajam Butterworth, MY;
Kar Keng Chua, Juru, MY;
Choong Kit Wong, Sungai Ara, MY;
Kok Yoong Foo, Simpang Ampat, MY;
Thow Pang Chong, Sungai Ara, MY;
Boon Jin Ang, Bagan Ajam Butterworth, MY;
Kar Keng Chua, Juru, MY;
Choong Kit Wong, Sungai Ara, MY;
Kok Yoong Foo, Simpang Ampat, MY;
Thow Pang Chong, Sungai Ara, MY;
Altera Corporation, San Jose, CA (US);
Abstract
A method of designing at IC is described. In one embodiment, the method includes providing an option to select a mask layer set from a plurality of mask layer sets, the plurality of mask layer sets including a first mask layer set and a second mask layer set, where the second mask layer set is an alternative mask layer option to the first mask layer set. In one embodiment, the method further includes receiving a selection from a user choosing a mask layer set from the plurality of mask layer sets. In one embodiment, the receiving occurs after design of the IC and prior to fabrication of the IC. Also, in one embodiment, the plurality of mask layer sets are predetermined mask layer sets. In one embodiment, the first mask layer set is a standard threshold voltage (SVT) mask layer set and the second mask layer set is a high threshold voltage (HVT) mask layer set. In one embodiment, core devices of the SVT mask layer set are SVT devices and some periphery devices of the SVT mask layer set are HVT devices. In one embodiment, hybrid cell (H-cell) devices of the HVT mask layer set are HVT devices and some periphery devices of the HVT mask layer set are HVT devices.