The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2012
Filed:
Aug. 25, 2008
Shuxian Wu, San Jose, CA (US);
Tao Yu, San Jose, CA (US);
Shuxian Wu, San Jose, CA (US);
Tao Yu, San Jose, CA (US);
Xilinx, Inc., San Jose, CA (US);
Abstract
A computer-implemented method of determining parasitic capacitance for transistors within an integrated circuit can include determining a first set of coefficients for a first expression that calculates parasitic capacitance for a transistor structure according to a first plurality of parasitic capacitances derived from a plurality of two-dimensional transistor structures (). The first set of coefficients can be inserted into the first expression (). The method further can include determining a second set of coefficients for a second expression that calculates parasitic capacitance for a transistor structure according to a second plurality of parasitic capacitances derived from a plurality of three-dimensional transistor structures (). The second expression can include the first expression (). The method can include inserting the second set of coefficients into the second expression and outputting the second expression ().