The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 03, 2012

Filed:

Dec. 02, 2009
Applicants:

Minoru Ikarashi, Kanagawa, JP;

Yutaka Higo, Kanagawa, JP;

Masanori Hosomi, Kanagawa, JP;

Hiroshi Kano, Kanagawa, JP;

Shinichiro Kusunoki, Kanagawa, JP;

Hiroyuki Ohmori, Kanagawa, JP;

Yuki Oishi, Kanagawa, JP;

Tetsuya Yamamoto, Kanagawa, JP;

Kazutaka Yamane, Kanagawa, JP;

Inventors:

Minoru Ikarashi, Kanagawa, JP;

Yutaka Higo, Kanagawa, JP;

Masanori Hosomi, Kanagawa, JP;

Hiroshi Kano, Kanagawa, JP;

Shinichiro Kusunoki, Kanagawa, JP;

Hiroyuki Ohmori, Kanagawa, JP;

Yuki Oishi, Kanagawa, JP;

Tetsuya Yamamoto, Kanagawa, JP;

Kazutaka Yamane, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/14 (2006.01); G11C 11/15 (2006.01);
U.S. Cl.
CPC ...
Abstract

A resistance variable memory device is provided and includes a resistance variable memory cell that writes data by utilizing a spin transfer effect based on an injection current. The memory device also includes a driving circuit that generates a combined pulse of a plurality of write pulses and an offset pulse defining the level between the write pulses and supplies the combined pulse to the memory cell at the time of the writing.


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