The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 03, 2012

Filed:

Jul. 02, 2008
Applicants:

Lawrence F. Cygan, Schaumburg, IL (US);

Andrew M. Khan, Schamburg, IL (US);

Curtis M. Williams, Schaumburg, IL (US);

Inventors:

Lawrence F. Cygan, Schaumburg, IL (US);

Andrew M. Khan, Schamburg, IL (US);

Curtis M. Williams, Schaumburg, IL (US);

Assignee:

Motorola Mobility, Inc., Libertyville, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

An H-bridge circuit formed from two sub-circuits coupled to each other by a load network across a respective load node of each of the sub-circuits. Each sub-circuit of the two sub-circuits comprises a depletion mode upper transistor with a second electrode coupled to a first electrode of a lower transistor. The load node of the sub-circuit is disposed between the second electrode of the upper transistor and the first electrode of a lower transistor. There is a first voltage supply node coupled to a first electrode of the upper transistor and a second voltage supply node is coupled to a second electrode of the lower transistor. An upper driver transistor selectively couples a gate electrode of the upper transistor to an upper drive voltage node, the upper driver transistor having a control electrode coupled to an upper switched voltage supply circuit. There is also a lower switched voltage supply circuit coupled to a gate electrode of the lower transistor and a voltage dependent non-linear resistor is coupled across the gate electrode and second electrode of the upper transistor. In use, when the lower transistor and upper driver transistor are in a non-conductive state a potential difference across the voltage dependent non-linear resistor is sufficiently small enough to control the upper transistor into a conductive state. Conversely, when the lower transistor and upper driver transistor are in a conductive state the potential difference across the voltage dependent non-linear resistor provides a negative bias to the gate electrode of the upper transistor that has a negative potential sufficient to control the upper transistor into a non-conductive state.


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