The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2012
Filed:
Apr. 16, 2009
Dev A. Girdhar, Indialantic, FL (US);
Thomas A. Jochum, Durham, NC (US);
Bogdan M. Duduman, Raleigh, NC (US);
Dev A. Girdhar, Indialantic, FL (US);
Thomas A. Jochum, Durham, NC (US);
Bogdan M. Duduman, Raleigh, NC (US);
Intersil Americas, Inc., Milpitas, CA (US);
Abstract
An improved organization for a MOSFET pair mounts first and second FET dies in an overlying or stacked relationship to reduce the surface area 'footprint' of the MOSFET pair. The source and drain of a high side FETand a low side FETor the drains of the respective high side FETand low side FETare bonded together, either directly or through an intermediate conductive ribbon or clip, to establish a common source/drain or drain/drain node that functions as the switch or phase node of the device. The stacked organization allows for lower-cost packaging that results in a significant reduction in the surface area footprint of the device and reduces parasitic impedance relative to the prior side-by-side organization and allows for improved heat sinking.