The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2012
Filed:
Feb. 04, 2011
Ayanori Ikoshi, Kyoto, JP;
Shingo Hashizume, Kyoto, JP;
Masahiro Hikita, Toyama, JP;
Hiroto Yamagiwa, Hyogo, JP;
Manabu Yanagihara, Osaka, JP;
Ayanori Ikoshi, Kyoto, JP;
Shingo Hashizume, Kyoto, JP;
Masahiro Hikita, Toyama, JP;
Hiroto Yamagiwa, Hyogo, JP;
Manabu Yanagihara, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A field effect transistor includes a semiconductor stack formed on a substrate, and having a first nitride semiconductor layer and a second nitride semiconductor layer. A source electrode and a drain electrode are formed on the semiconductor stack so as to be separated from each other. A gate electrode is formed between the source electrode and the drain electrode so as to be separated from the source electrode and the drain electrode. A hole injection portion is formed near the drain electrode. The hole injection portion has a p-type third nitride semiconductor layer, and a hole injection electrode formed on the third nitride semiconductor layer. The hole injection electrode and the drain electrode have substantially the same potential.