The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2012
Filed:
Mar. 26, 2010
Shin Hashimoto, Itami, JP;
Tatsuya Tanabe, Itami, JP;
Katsushi Akita, Itami, JP;
Hideaki Nakahata, Itami, JP;
Hiroshi Amano, Nagoya, JP;
Shin Hashimoto, Itami, JP;
Tatsuya Tanabe, Itami, JP;
Katsushi Akita, Itami, JP;
Hideaki Nakahata, Itami, JP;
Hiroshi Amano, Nagoya, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
A group III nitride semiconductor device and a group III nitride semiconductor wafer are provided. The group III nitride semiconductor device has a channel layer comprising group III nitride-based semiconductor containing Al. The group III nitride semiconductor device can enhance the mobility of the two-dimensional electron gas and improve current characteristics. The group III nitride semiconductor wafer is used to make the group III nitride semiconductor device. The group III nitride semiconductor wafer comprises a substrate made of AlGaN (0<X≦1), a first AlGaN layer made of group III nitride-based semiconductor containing Al and disposed on the substrate, and a second AlGaN layer made of group III nitride-based semiconductor having a bandgap greater than the first AlGaN layer and disposed thereon. The full width at half maximum values of X-ray rocking curves for (0002) and (10-12) planes of the first AlGaN layer are less than 1000 arcseconds.