The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2012
Filed:
Oct. 19, 2011
Applicant:
Ryo Saeki, Tokyo, JP;
Inventor:
Ryo Saeki, Tokyo, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/10 (2010.01); H01L 33/32 (2010.01); H01L 33/42 (2010.01);
U.S. Cl.
CPC ...
Abstract
A method for producing a light-emitting device, includes: performing, on a first substrate made of III-V group compound semiconductor, crystal growth of a laminated body including an etching easy layer contiguous to the first substrate and a light-emitting layer made of nitride semiconductor; bonding a second substrate and the laminated body; and detaching the second substrate provided with the light-emitting layer from the first substrate by, one of removing the etching easy layer by using a solution etching method, and removing the first substrate and the etching easy layer by using mechanical polishing method.