The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2012
Filed:
May. 08, 2007
Hisayuki Miki, Ichihara, JP;
Hiromitsu Sakai, Ichihara, JP;
Kenzo Hanawa, Ichihara, JP;
Yasunori Yokoyama, Ichihara, JP;
Yasumasa Sasaki, Ichihara, JP;
Hiroaki Kaji, Ichihara, JP;
Hisayuki Miki, Ichihara, JP;
Hiromitsu Sakai, Ichihara, JP;
Kenzo Hanawa, Ichihara, JP;
Yasunori Yokoyama, Ichihara, JP;
Yasumasa Sasaki, Ichihara, JP;
Hiroaki Kaji, Ichihara, JP;
Showa Denko K.K., Tokyo, JP;
Abstract
An object of the present invention is to obtain a group III nitride compound semiconductor stacked structure where a group III nitride compound semiconductor layer having good crystallinity is stably stacked on a dissimilar substrate. The group III nitride compound semiconductor stacked structure of the present invention is a group III nitride compound semiconductor stacked structure comprising a substrate having provided thereon a first layer comprising a group III nitride compound semiconductor and a second layer being in contact with the first layer and comprising a group III nitride compound semiconductor, wherein the first layer contains a columnar crystal with a definite crystal interface and the columnar crystal density is from 1×10to 1×10crystals/μm.