The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2012
Filed:
Jan. 09, 2009
Yukio Kawano, Saitama, JP;
Koji Ishibashi, Saitama, JP;
Yukio Kawano, Saitama, JP;
Koji Ishibashi, Saitama, JP;
Riken, Saitama, JP;
Abstract
A near-field terahertz wave detector comprises a semiconductor chip () whose longitudinal electrical resistance along its surface changes due to a near-field wave of a terahertz wave (), an insulating film () which covers the surface of the semiconductor chip, and a conductive film () able to shield the terahertz wave by covering the surface of the insulating film. The conductive film () has an aperture () whose maximum size is one digit or more smaller than the wavelength of the terahertz wave. Further, a planar conductive probe () is provided between the conductive film () and the semiconductor chip (). The conductive probe () is insulated from the conductive film () by the insulating film (), and a tip () of the conductive probe () is located inside the aperture (). It is possible to increase a signal-to-noise ratio by significantly reducing the effect of a far-field wave, thereby enabling a near-field wave to be detected with high efficiency and increasing the resolution of an object by the near-field wave to one tenth or less of the wavelength.