The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 03, 2012

Filed:

Oct. 28, 2010
Applicants:

Hyoung Joon Kim, Gyeonggi-do, KR;

Ho Yup Kwon, Seoul, KR;

Jeong Hoon Park, Gyeonggi-do, KR;

Sung Hyun Kim, Seoul, KR;

Inventors:

Hyoung Joon Kim, Gyeonggi-do, KR;

Ho Yup Kwon, Seoul, KR;

Jeong Hoon Park, Gyeonggi-do, KR;

Sung Hyun Kim, Seoul, KR;

Assignee:

Hynix Semiconductor Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing a semiconductor device includes the steps of forming a plug on a semiconductor substrate, forming an insulation layer over the semiconductor substrate having the plug formed thereon, defining a line type trench through a first etching of a partial thickness of the insulation layer; and defining a contact hole through a second etching of a portion of the insulation layer corresponding to the bottom of the trench so as to expose the plug.


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