The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2012
Filed:
Mar. 22, 2011
Toshiaki Tsutsumi, Tokyo, JP;
Tomonori Okudaira, Tokyo, JP;
Keiichiro Kashihara, Tokyo, JP;
Tadashi Yamaguchi, Tokyo, JP;
Toshiaki Tsutsumi, Tokyo, JP;
Tomonori Okudaira, Tokyo, JP;
Keiichiro Kashihara, Tokyo, JP;
Tadashi Yamaguchi, Tokyo, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
There is provided a semiconductor device having a metal silicide layer which can suppress the malfunction and the increase in power consumption of the device. The semiconductor device has a semiconductor substrate containing silicon and having a main surface, first and second impurity diffusion layers formed in the main surface of the semiconductor substrate, a metal silicide formed over the second impurity diffusion layer, and a silicon nitride film and a first interlayer insulation film sequentially stacked over the metal silicide. In the semiconductor device, a contact hole penetrating through the silicon nitride film and the first interlayer insulation film, and reaching the surface of the metal silicide is formed. The thickness of a portion of the metal silicide situated immediately under the contact hole is smaller than the thickness of a portion of the metal silicide situated around the contact hole.