The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2012
Filed:
May. 07, 2009
Wen Yu Lin, Taichung County, TW;
Shih Cheng Huang, Hsinchu, TW;
Po Min Tu, Chiayi County, TW;
Chih Peng Hsu, Tainan County, TW;
Shih Hsiung Chan, Hsinchu County, TW;
Wen Yu Lin, Taichung County, TW;
Shih Cheng Huang, Hsinchu, TW;
Po Min Tu, Chiayi County, TW;
Chih Peng Hsu, Tainan County, TW;
Shih Hsiung Chan, Hsinchu County, TW;
Advanced Optoelectronic Technology, Inc., Hsinchu Hsien, TW;
Abstract
A method for separating a semiconductor from a substrate is disclosed. The method comprises the following steps: forming a plurality of columns on a substrate; epitaxially growing a semiconductor on the plurality of columns; and injecting etching liquid into the void among the plurality of columns so as to separate the semiconductor from the substrate. The method of this invention can enhance the etching efficiency of separating the semiconductor from the substrate and reduce the fabrication cost because the etching area is increased due to the void among the plurality of columns. In addition, the method will not confine the material of the above-mentioned substrate.