The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2012
Filed:
Dec. 24, 2008
Masakatsu Ikisawa, Kitaibaraki, JP;
Masataka Yahagi, Kitaibaraki, JP;
Masakatsu Ikisawa, Kitaibaraki, JP;
Masataka Yahagi, Kitaibaraki, JP;
JX Nippon Mining & Metals Corporation, Tokyo, JP;
Abstract
There is provided a method for producing an a-IGZO oxide thin film by sputtering, which can control the carrier density of the film to a given value with high reproducibility. The method is an amorphous In—Ga—Zn—O based oxide thin film production method including: providing a sintered oxide material consisting essentially of indium (In), gallium (Ga), zinc (Zn), and oxygen (O) as constituent elements, wherein the ratio [In]/([In]+[Ga]) of the number of indium atoms to the total number of indium and gallium atoms is from 20% to 80%, the ratio [Zn]/([In]+[Ga]+[Zn]) of the number of zinc atoms to the total number of indium, gallium and zinc atoms is from 10% to 50%, and the sintered oxide material has a specific resistance of 1.0×10Ωcm or less; and producing a film on a substrate by direct current sputtering at a sputtering power density of 2.5 to 5.5 W/cmusing the sintered oxide material as a sputtering target.