The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2012
Filed:
Mar. 09, 2007
Gerhard Lammel, Tuebingen, DE;
Hubert Benzel, Pliezhausen, DE;
Matthias Illing, Palo Alto, CA (US);
Franz Laermer, Weil der Stadt, DE;
Silvia Kronmueller, Schwaikheim, DE;
Paul Farber, Stuttgart, DE;
Simon Armbruster, Gomaringen, DE;
Ralf Reichenbach, Esslingen, DE;
Christoph Schelling, Stuttgart, DE;
Ando Feyh, Tamm, DE;
Gerhard Lammel, Tuebingen, DE;
Hubert Benzel, Pliezhausen, DE;
Matthias Illing, Palo Alto, CA (US);
Franz Laermer, Weil der Stadt, DE;
Silvia Kronmueller, Schwaikheim, DE;
Paul Farber, Stuttgart, DE;
Simon Armbruster, Gomaringen, DE;
Ralf Reichenbach, Esslingen, DE;
Christoph Schelling, Stuttgart, DE;
Ando Feyh, Tamm, DE;
Robert Bosch GmbH, Stuttgart, DE;
Abstract
A method for manufacturing a semiconductor structure is provided which includes the following operations: supplying a crystalline semiconductor substrate, providing a porous region adjacent to a surface of the semiconductor substrate, introducing a dopant into the porous region from the surface, and thermally recrystallizing the porous region into a crystalline doping region of the semiconductor substrate whose doping type and/or doping concentration and/or doping distribution are/is different from those or that of the semiconductor substrate. A corresponding semiconductor structure is likewise provided.