The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2012
Filed:
Jul. 20, 2010
Kazuhiro Shiba, Tokyo, JP;
Kikuo Makita, Tokyo, JP;
Takeshi Nakata, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
Disclosed is a method for manufacturing a semiconductor light-receiving device having high reproducibility and reliability. Specifically disclosed is a semiconductor light-receiving devicewith a mesa structure wherein a light-absorbing layer, an avalanche multiplication layerand an electric-field relaxation layerare formed on a semiconductor substrate. The light-absorbing layer, avalanche multiplication layerand electric-field relaxation layerexposed in the side wall of the mesa structure are protected by an SiNfilm or an SiONfilm. The hydrogen concentration in the side wall surface of the electric-field relaxation layeris set at not more than 15%, preferably not more than 10% of the carrier concentration of the electric-field relaxation layer