The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2012
Filed:
Aug. 31, 2010
Young-kuk Kim, Seoul, KR;
Mi-lim Park, Bucheon-si, KR;
Hori Ihideki, Seoul, KR;
Dong-seok Suh, Hwaseong-si, KR;
Young-Kuk Kim, Seoul, KR;
Mi-Lim Park, Bucheon-si, KR;
Hori Ihideki, Seoul, KR;
Dong-Seok Suh, Hwaseong-si, KR;
Abstract
A method of measuring a resistance of a memory cell in a resistive memory device can be provided by applying a data write pulse to a selected cell of the resistive memory device, applying a resistance read pulse to the selected cell after a delay time measured from a time of applying the data write pulse, measuring a drop voltage at the cell responsive to a pulse waveform output when applying the resistance read pulse to the selected cell, measuring a total current through the cell using the drop voltage and an internal resistance of a test device coupled to the cell, and determining a resistance of the resistive memory device using the total current and a voltage of the resistance read pulse.